ELG 6369 Nonlinear Microwaves Devices and Effects
3 crédits
Genie electrique
Faculte de genie
The physical basis and mathematical modelling of a variety of microwave/millimetre-wave devices, (some of which exhibit the most extreme nonlinear behaviour known), how they can be exploited in practical circuits and systems, and how the resulting device/circuit interactions can be analyzed. Devices include two-terminal nonlinear-resistance elements (varistors) and two two-terminal nonlinear-reactance devices (varactors) based on classical, heterostructure and superconducting technologies: pn and Schottky-barrier diodes, tunnel and resonant-tunneling diodes, BIN and BNN varactor diodes, single-barrier-varactor diodes, high-electron-mobility varactor diodes, Josephson-junction diodes, and SIS quasiparticle tunneling junctions. Three-terminal nonlinear devices include MESFETs, HBTs, and HEMTs and RHETs. Circuit applications encompass direct radiation detectors; frequency mixers; resistive, reactive, and active frequency multipliers; as well as reactive and regenerative frequency dividers. Emphasis will be placed on analytical approaches that provide global insight into the nonlinear phenomena. This course is equivalent to ELEC 5609 at Carleton University.
Volet:
Cours magistral
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Hiver
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